Back to 460 Home
Calendar
Previous Lecture
Next Lecture

Phys 460 Lecture 16

( pdf version - 6 slides/page )
Monday, October 23, 2006
Lecturer: Richard Martin
Homework 7

Reading:
Kittel, Chapt. 8

Semiconductors
Outline

  1. From previous lectures:
    • Part I: Crystal Structures, Diffraction, Reciprocal Lattice, Crystal binding
      Phonons, Dispersion curves,Thermal properties
    • Free electron gas
    • Energy bands for electrons in crystals
      • Bloch theorem
      • Bands Ekn, gaps
      • Counting k states: one band holds 2 electrons (2 spins) per cell
      • Nearly-free-electron approximation
      • metals vs. insulators
  2. What is a semiconductor?
    • Defined by density of carriers : High enough for interesting conductivity; Low enough to be controlled by temperature and other factors
    • Exponential variation with temperature implies energy gap
    • See figures in Kittel p 186, 188, table of values on p 190
  3. Qualitative understanding of semiconductors and semimetals from band picture
    • Semiconductors are insulators with a small gap
    • This leads to important consequences for conductivity
    • Note: semimetals have overlapping bands - can be close relatives of semiconductors
  4. Bands in real semiconductors - Si, Ge, GaAs, ...
    • All are FCC with 2 atoms per primitive cell
    • 8 valence electrons per primitive cell
    • Starting point - Nearly free electrons!
    • Free electrons bands for FCC - (homework)
    • Work out using our knowledge from before about the Brillouin zone of any FCC crystal
    • Actual bands - we only give results here (e.g. Ge shown in figure in Kittel. p 203)
    • What is the same - what is different about Si, Ge, GaAs, ...
  5. Optical properties - comparison of Si, Ge, GaAs, ...
    • Why is your computer chip made of Si, but the laser in your CD player is made of GaAs (in the future GaN?)
    • Direct vs indirect transitions
    • “Vertical transition”, i.e., Delta k = 0, since light has k nearly 0
    • In GaAs the lowest energy possible is a direct “vertical” transition
    • In Si the lowest energy possible is “indirect” non-vertical transition - weak - must involve a phonon to conserve momentum
    • Light emission is related
      very high efficiency in GaAs for excited electron to emit red light
      very low efficiency in Si
    • Why is GaN interesting?(Also AlAs, InAs, ..)
      After decades of attempts, it is now possible to make efficient blue light emitters and lasers (Physics Today, October, 2006)
    • Shorter wavelength light focuses to smaller spot implies higher density of information on a CD!

Email clarification questions and corrections to rmartin@uiuc.edu
Email questions on solving problems to xin2@.uiuc.edu