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Phys 460 Lecture 17

( pdf version - 6 slides/page )
Wednesday, October 25, 2006
Lecturer: Richard Martin
No new Homework today

Reading:
Kittel, Chapt. 8

Semiconductors - continued
Outline

  1. From previous lectures:
    • Part I: Crystal Structures, Diffraction, Reciprocal Lattice, Crystal binding
      Phonons, Dispersion curves,Thermal properties
    • Free electron gas
    • Energy bands for electrons in crystals:
      • Bloch theorem, Bands Ekn, gaps, metals vs. insulators
  2. From last time
    • A semiconductor is defined by the density of carriers : High enough for interesting conductivity; Low enough to be controlled by temperature and other factors
    • Exponential variation with temperature implies energy gap
    • Qualitative understanding of semiconductors and semimetals from band picture
    • Bands in real semiconductors - Si, Ge, GaAs, ...
      • All are FCC with 8 valence electrons per primitive cell
      • Actual bands - nearly-free-electron-like
      • What is the same, different about Si, Ge, GaAs, ...
    • Optical properties - comparison of Si, Ge, GaAs, ...
      • Why is your computer chip made of Si, but the laser in your CD player is made of GaAs (in the future GaN?)
      • Direct “vertical” transition vs “indirect” weak transition
  3. Mobile carriers in a crystal
    • Key point: the motion of electrons in crystals is affected by the periodic lattice
      • The key ideas are already included in the energy Ekn and the wavefunction psikn, where n is the band index and k is the "crystal momentum".
      • If we apply small additional electric field E and/or magnetic field B, the electrons can respond by changes in crystal momentum k, energy E, and/or band index n.
      • Changes in E and k are related: k can change only if E changes or if k changes along a constant energy surface in 2 nad 3 dimensions
  4. Equation of motion and effective mass
    • Motion with force F applied
      F = hbar (dk/dt) - same as for free electrons!
    • BUT this is strange - acceleration is not the same
    • Acceleration = dv/dt which shows electron acts like it has effective mass m*, where (hbar2/2m*) = d2E/dk2
    • Not a violation of Newton's laws - Why?
  5. Electrons and holes
    • What about empty states in the valence band?
    • Everything is upside down!
    • Analysis on slides and in Kittel (p 191-205) shown that one can decribe the properties as "electrons" and "holes" with "3effective masses" M*
      • 1. khole = - kmissing electron
      • 2. Ehole = - Emissing electron
      • 3. vhole = + vmissing electron
      • 4. m*hole = - m*missing electron > 0
      • 5. qhole = -qmissing electron = + |e| (positive!)
  6. Both electrons and holes can conduct electricity
    • Current is the sum of electron current and hole current
  7. Law of mass action and equilibrium concentration of electrons and holes (Kittel p 205-208)
    • Derivation of densities of carriers
    • Law of mass action
    • product np = constant (depends upon the crystal and the temperature)
    • Determines directly n and p for an intrinsic crystal where n=p
    • Extrinsic cases - dping - more later
  8. Motion in a magnetic field Hall effect
    • Cyclotron resonance measures m*
    • Hall effect measures signs densities and mobilites (if one combines conductivty information and knows that only simple bands contribute)

Email clarification questions and corrections to rmartin@uiuc.edu
Email questions on solving problems to xin2@.uiuc.edu