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Phys 460 Lecture 19
(
pdf version - 6 slides/page
)
Wednesday, November 1, 2006
Lecturer: Richard Martin
Homework 8
Reading: Kittel, Ch. 17, p 503-12; Added material in notes
Semiconductor Devices
Outline
From previous lectures:
Part I: Crystal Structures, Diffraction, Reciprocal Lattice, Crystal binding
Phonons, Dispersion curves,Thermal properties
Free electron gas
Energy bands for electrons in crystals:
Bloch theorem, Bands E
k
n
, gaps, metals vs. insulators
Semiconductors
Effective mass, negative electrons and positive holes
Law of mass action: np = "constant"
Doping by foreign atoms Binding of electrons or hole to impurity
Thermoelectric effects, Hall effect, Cyclotron resonance
What is a semiconductor device?
Inhomogeneous material or doping
Control of currents or light
Variations in band energies and Fermi energy
Band energies vary by - eV(r) due to electrostatic voltage V(r)
Fermi energy mu is the same everywhere in equilibrium
Concentrations: n = N
0
exp( - (E
c
- eV(r) - mu)/kB T), etc.
We can also define "Electrochemical potential" mu
elec
= mu +eV
Then n = N
0
exp( - (E
c
- mu
elec
)/kB T), etc.
Either is correct. We will use the constant mu
p-n junction
Depletion region
Charges provide fields that shift bands
Rectification: (Diode behavior)
Forward bias - exponential increase in current with V
Reverse bias - saturation at small value
Light emitting diodes - LEDs
p-n junction with forward bias
Electron hole recombination gives off light in many systems, e.g., GaAs
Solar Cell
Reverse effect
Light creates electron-hole pairs that separate and give useful current
Bipolar Transistor n-p-n p-n-p
Forward and Reverse biased junctions in series
Carriers emitted into into narrow base with forward biased junction
Actually are "swept" into reverse bias junction
Current amplification - small current controls large one
Email clarification questions and corrections to
rmartin@uiuc.edu
Email questions on solving problems to
xin2@.uiuc.edu